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| AGR21030EF 30 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Ri JC Value 2.0 Unit C/W Table 2. Absolute Maximum Ratings* Parameter Sym Value Drain-source Voltage VDSS 65 Gate-source Voltage VGS -0.5, 15 Total Dissipation at TC = 25 C PD 87.5 Derate Above 25 C -- 0.5 CW RF Input Power -- 10 (VDS = 31 V) Operating Junction TemperaTJ 200 ture Storage Temperature Range TSTG -65, 150 Unit Vdc Vdc W W/C W C C Figure 1. AGR21030EF (flanged) Package Features Typical performance for 2 carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1 - 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1 - 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF: -- Output power: 7 W. -- Power gain: 14.5 dB. -- Efficiency: 26%. -- IM3: -34 dBc. -- ACPR: -37 dBc. -- Return loss: -12 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 2140 MHz, 30 W continuous wave (CW) output power. Large signal impedance parameters available. * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR21030EF HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR21030EF 30 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter Off Characteristics Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) 38 Drain-source Breakdown Voltage (VGS = 0, ID =150 A) V(BR)DSS IGSS IDSS GFS 65 -- -- -- -- -- -- 2.4 1 50 3 -- -- Adc Adc S Vdc Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.4 A) Gate Threshold Voltage (VDS = 10 V, ID = 100 A) Drain-source On-voltage (VGS = 10 V, ID = 0.4 A) Gate Quiescent Voltage (VDS = 28 V, ID = 300 mA) VGS(TH) VDS(ON) VGS(Q) 2.8 3.0 -- 3.4 3.8 4.0 4.6 -- Vdc Vdc Vdc 0.30 Table 5. RF Characteristics Parameter Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) Common-source Amplifier Power Gain* Third-order Intermodulation Distortion* (IM3 distortion measured over 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz) Adjacent Channel Power Ratio* (ACPR measured over BW of 3.84 MHz @ f1 - 5 MHz and f2 + 5 MHz) Output Power, 1 dB Compression Point (VDD = 28 V, fC = 2140.0 MHz) Input Return Loss* Drain Efficiency* Symbol Dynamic Characteristics CRSS -- 0.8 -- pF Min Typ Max Unit Functional Tests (in Supplied Test Fixture) Agere Systems Supplied Test Fixture) GPS IM3 ACPR P1dB IRL 13.5 24 -- 14.5 -34 -37 30 -12 26 -- -- dB dBc dBc W dB % -32 -36 -- -10 -- 27 -- Output Mismatch Stress (VDD = 28 V, POUT = 30 W (CW), IDQ = 300 mA, fC = 2140.0 MHz VSWR = 10:1; [all phase angles]) No degradation in output power. * 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135 MHz, and f2 = 2145 MHz. VDD = 28 Vdc, IDQ = 300 mA, and POUT = 7 W avg. Nominal operating voltage 28 Vdc. Qualified for a maximum operating voltage of 32 Vdc 0.5 V. AGR21030EF 30 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR21030EF FB1 VGG + C4 C3 Z1 RF INPUT C1 C2 Z2 Z5 Z3 Z4 2 1 3 Z6 Z9 C6 C7 Z7 C8 C5 Z8 RF OUTPUT C9 C10 R1 VDD + DUT PINS: 1. DRAIN 2. GATE 3. SOURCE A. Schematic Parts List: Microstrip line: Z1, 0.510 in. x 0.066 in.; Z2, 0.470 in. x 0.066 in.; Z3, 0.375 in. x 0.066 in. Z4, 0.280 in. x 0.540 in.; Z5, 0.570 in. x 0.050 in.; Z6, 0.360 in. x 0.390 in.; Z7, 0.640 in. x 0.125 in.; Z8, 0.685 in. x 0.066 in.; Z9, 0.685 in. x 0.050 in. ATC (R) chip capacitor: C1, C5: 8.2 pF 100B8R2JW500X; C2, C6 6.8 pF 100B6R8JW500X. Kemet(R) capacitor: C8 0.01 F C1206104K5RAC7800; C9 0.1 F GRM40X7R103K100AL. Vitramon (R) 1206 capacitor: C3, C7: 22,000 pF. Sprague (R) tantalum capacitor: C4, C10: 22 F, 35 V. Fair-Rite (R) ferrite bead: FB1 2743019447. 1206 size chip resistor: R1 12 . Taconic(R) ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout Figure 2. AGR21030EF Test Circuit AGR21030EF 30 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are 0.005 in. unless specified. AGR21030EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES A AGR21030XF AR G 21045F YYWWLL XXXXX Y W LL YW ZZZZZZZ ZZZZZZZ 1 3 3 2 2 Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. The last two letters of the part number denote wafer technology and package type. AGR21030EF 30 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 20.00 18.00 16.00 14.00 GAIN (dB)Z 50.0 (%), RL (dB), IMD3 (dBc), ACPR (dBc)Z 40.0 30.0 GAIN 20.0 10.0 0.0 RL IMD3 ACPR 2110 2120 2130 2140 2150 2160 2170 -10.0 -20.0 -30.0 -40.0 -50.0 2180 12.00 10.00 8.00 6.00 4.00 2.00 0.00 2100 FREQUENCY (MHz) TEST CONDITIONS: VDD = 28 V, IDQ = 300 mA, POUT = 7 W. 2-carrier W-CDMA 3GPP, Peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 CBW. Figure 8. Broadband Performance +5 -0 -5 -10 -15 -20 -25 -30 -35 -40 -45 Center 2.140 GHz IMD3 F1 F2 IMD3 ACPR ACPR Span 50 MHz TEST CONDITIONS: VDD = 28 V, IDQ = 300 mA, POUT = 7 W. 2-carrier W-CDMA 3GPP, Peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 CBW. Figure 9. Spectral Plot . AGR21030EF 30 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 15.0 14.0 POWER GAIN (dB)Z 4.0 AM to AM (POWER GAIN [dB]) AM to PM (PHASE [degrees]) 2.0 0.0 -4.0 -6.0 -8.0 -10.0 -12.0 -14.0 -16.0 -18.0 -20.0 40.0 PHASE (DEGREES)Z -2.0 13.0 12.0 11.0 10.0 9.0 10.0 15.0 20.0 25.0 PIN (dBm)Z 30.0 35.0 TEST CONDITIONS: VDD = 28 Vdc, F = 2140 MHz, IDQ = 300 mA CW input. Figure 10. AM-AM and AM-PM Characteristics AGR21030EF 30 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 20.00 18.00 16.00 14.00 GAIN (dB)Z 50.0 (%), RL (dB), IMD3 (dBc), ACPR (dBc)Z 40.0 30.0 GAIN 20.0 10.0 0.0 RL IMD3 ACPR 2110 2120 2130 2140 2150 2160 2170 -10.0 -20.0 -30.0 -40.0 -50.0 2180 12.00 10.00 8.00 6.00 4.00 2.00 0.00 2100 FREQUENCY (MHz) TEST CONDITIONS: VDD = 28 V, IDQ = 300 mA, POUT = 7 W. 2-carrier W-CDMA 3GPP, Peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 CBW. Figure 8. Broadband Performance +5 -0 -5 -10 -15 -20 -25 -30 -35 -40 -45 Center 2.140 GHz IMD3 F1 F2 IMD3 ACPR ACPR Span 50 MHz TEST CONDITIONS: VDD = 28 V, IDQ = 300 mA, POUT = 7 W. 2-carrier W-CDMA 3GPP, Peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 CBW. Figure 9. Spectral Plot . AGR21030EF 30 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 15.0 14.0 POWER GAIN (dB)Z 4.0 AM to AM (POWER GAIN [dB]) AM to PM (PHASE [degrees]) 2.0 0.0 -4.0 -6.0 -8.0 -10.0 -12.0 -14.0 -16.0 -18.0 -20.0 40.0 PHASE (DEGREES)Z -2.0 13.0 12.0 11.0 10.0 9.0 10.0 15.0 20.0 25.0 PIN (dBm)Z 30.0 35.0 TEST CONDITIONS: VDD = 28 Vdc, F = 2140 MHz, IDQ = 300 mA CW input. Figure 10. AM-AM and AM-PM Characteristics AGR21030EF 30 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are 0.005 in. unless specified. AGR21030EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES A AGR21030XF AR G 21045F YYWWLL XXXXX Y W LL YW ZZZZZZZ ZZZZZZZ 1 3 3 2 2 Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. The last two letters of the part number denote wafer technology and package type. |
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